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Infineon Technologies IRF8308MTRPBF — Discrete Semiconductors
Infineon Technologies

IRF8308MTRPBF N-Channel MOSFET, 2.5 mOhm Rds(on) at 10 V

MPNIRF8308MTRPBF
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IRF8308MTRPBF, Infineon HEXFET N-channel trench MOSFET, 30 V, 27 A, 2.5 mOhm Rds(on) at 10 V, 42 nC gate charge at 4.5 V, DIRECTFET MV package, surface mount, -40°C to 150°C junction.

$1.06Ref. price · indicative, final on quote
IRF8308MTRPBF datasheet
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MOQ1 pcs
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Specifications

IRF8308MTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-40°C to 150°C(TJ)
Vgs±20 V
Power_w2.8
Package_typeBulk
Capacitance_uf0.0044
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.35 V @ 100µA
Switching_current_a27.0
Rds on (Max) @ id, vgs2.5mOhm @ 27 A, 10 V
Gate charge (Qg) (Max) @ vgs42 nC @ 4.5 V

Product details

2.5 mOhm at 10 V — the number that drives the BOM

The IRF8308MTRPBF is an N-channel trench MOSFET from the HEXFET series, rated 30 V drain-source and 27 A continuous drain current. In a 10 A load, the I²R loss is 0.25 W at 25 °C junction; at 125 °C the Rds(on) roughly doubles, so budget 0.5 W for the thermal analysis.

Gate charge and switching loss budget

Gate charge (Qg) is 42 nC at 4.5 V. For a 500 kHz switching regulator, the gate-drive power is Qg × Vgs × fsw = 42 nC × 4.5 V × 500 kHz = 94.5 mW — well within the capability of a standard MOSFET driver, but the driver's output current must source that charge in the target rise time. The low Qg also keeps the Miller plateau short, reducing cross-conduction losses in half-bridge topologies.

Junction temperature and environment

The 150 °C Tj(max) gives headroom for transient overloads and high-side switching in hot environments.

Frequently asked questions

What is the Rds(on) of IRF8308MTRPBF at 10 V gate drive?

The maximum Rds(on) is 2.5 mOhm at 10 V gate-source voltage and 27 A drain current. This is the value used for conduction loss calculations in the power stage.

What is the maximum drain current and voltage rating of IRF8308MTRPBF?

The drain-source voltage rating is 30 V, and the continuous drain current is 27 A. These define the safe operating area for the MOSFET.

What is the gate charge of IRF8308MTRPBF?

The maximum total gate charge (Qg) is 42 nC at 4.5 V gate drive. This value is used to size the gate-driver output current for the target switching frequency.