100 V, 80 A N-channel HEXFET in D2PAK
It comes in a D2PAK (TO-263) surface-mount package, designed for high-current switching applications where board space is tight but thermal performance still matters — the large copper tab on the D2PAK pulls heat into the PCB plane.
15 mOhm Rds(on) — what it means for conduction loss
The on-resistance is 15 mOhm maximum at 45 A drain current with 10 V gate drive. At 45 A, that works out to roughly 30 W conduction loss at the hot junction — the 260 W package dissipation rating (at case temperature) gives enough thermal headroom for a properly heatsunk design, but the junction temperature derating curve is the real limiter in continuous operation.
Gate charge and switching drive
Total gate charge is 120 nC at 10 V, with an input capacitance of 3830 pF at 25 V drain-source. For a 100 kHz switching frequency, the average gate drive current needed is about 12 mA — a standard MOSFET gate driver handles that comfortably. The ±20 V maximum gate-source rating gives margin for ringing on long gate traces in a motor-drive or power-supply layout.
Temperature range and application fit
Junction temperature range is -55°C to 175°C, covering military and industrial extremes. That makes it suitable for under-hood automotive, industrial motor drives, telecom rectifiers, and battery management systems where the ambient can push past 85°C and the MOSFET sees self-heating on top. The 4 V maximum gate threshold at 250 µA drain current means it needs a 10 V gate drive to hit the rated Rds(on) — a 5 V logic-level drive will leave it partially enhanced and running hot.
Active production — no LTB concern
It is ROHS3 compliant, and the D2PAK package is a standard surface-mount format that remains widely used in power designs.