IRF8010STRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-channel MOSFET, IRF8010STRLPBF, 100V Vdss, 80A Id, 15mOhm Rds(on) at 10V, D2PAK surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IRF8010STRLPBF
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[IN STOCK] In Stock: 26 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF8010STRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation260W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3830 pF @ 25 V

Technical details

100 V, 80 A N-channel HEXFET in D2PAK

It comes in a D2PAK (TO-263) surface-mount package, designed for high-current switching applications where board space is tight but thermal performance still matters — the large copper tab on the D2PAK pulls heat into the PCB plane.

15 mOhm Rds(on) — what it means for conduction loss

At 45 A, that works out to roughly 30 W conduction loss at the hot junction — the 260 W package dissipation rating (at case temperature) gives enough thermal headroom for a properly heatsunk design, but the junction temperature derating curve is the real limiter in continuous operation.

Gate charge and switching drive

That makes it suitable for under-hood automotive, industrial motor drives, telecom rectifiers, and battery management systems where the ambient can push past 85°C and the MOSFET sees self-heating on top.

It is ROHS3 compliant, and the D2PAK package is a standard surface-mount format that remains widely used in power designs.

IRF8010STRLPBF
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