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Infineon Technologies IRF8010STRLPBF

IRF8010STRLPBF HEXFET N-Channel MOSFET, 100V 80A D2PAK

MPNIRF8010STRLPBF
End of Life

Infineon HEXFET N-channel MOSFET, IRF8010STRLPBF, 100V Vdss, 80A Id, 15mOhm Rds(on) at 10V, D2PAK surface-mount package, -55°C to 175°C junction temperature.

$2.7Ref. price · indicative, final on quote
Infineon Technologies IRF8010STRLPBF datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF8010STRLPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation260W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3830 pF @ 25 V

Product details

100 V, 80 A N-channel HEXFET in D2PAK

It comes in a D2PAK (TO-263) surface-mount package, designed for high-current switching applications where board space is tight but thermal performance still matters — the large copper tab on the D2PAK pulls heat into the PCB plane.

15 mOhm Rds(on) — what it means for conduction loss

At 45 A, that works out to roughly 30 W conduction loss at the hot junction — the 260 W package dissipation rating (at case temperature) gives enough thermal headroom for a properly heatsunk design, but the junction temperature derating curve is the real limiter in continuous operation.

Gate charge and switching drive

That makes it suitable for under-hood automotive, industrial motor drives, telecom rectifiers, and battery management systems where the ambient can push past 85°C and the MOSFET sees self-heating on top.

It is ROHS3 compliant, and the D2PAK package is a standard surface-mount format that remains widely used in power designs.

Frequently asked questions

What is the Rds(on) of IRF8010STRLPBF?

The maximum on-resistance is 15 mOhm at 45 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations in your thermal design.

What is the gate charge of IRF8010STRLPBF?

Total gate charge is 120 nC at 10 V gate-source voltage. This determines the gate drive current needed for your switching frequency — for example, at 100 kHz the average drive current is about 12 mA.