100 V, 15 mOhm – the conduction-loss anchor
The IRF8010PBF is an N-channel HEXFET MOSFET rated for a drain-to-source voltage of 100 V and a maximum on-resistance of 15 mOhm at a gate drive of 10 V and 45 A drain current.
80 A continuous – the thermal ceiling in practice
The continuous drain current is 80 A at a case temperature of 25°C.
Total gate charge is 120 nC at 10 V.
Package and mounting – TO-220AB
The part is through-hole mounted in a TO-220-3 package (supplier device package TO-220AB). The exposed metal tab is the drain connection; the thermal pad area on the PCB or heatsink sets the junction-to-case thermal resistance.