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Infineon Technologies IRF8010PBF
Infineon Technologies

IRF8010PBF HEXFET N-Channel MOSFET, 100 V, 15 mOhm, TO-220

MPNIRF8010PBF
End of Life

IRF8010PBF, HEXFET series, N-Channel MOSFET, 100 V Vdss, 15 mOhm Rds(on) at 10 V, 80 A continuous, TO-220-3, -55°C to 175°C.

$2.1Ref. price · indicative, final on quote
IRF8010PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF8010PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation260W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3830 pF @ 25 V

Product details

100 V, 15 mOhm – the conduction-loss anchor

The IRF8010PBF is an N-channel HEXFET MOSFET rated for a drain-to-source voltage of 100 V and a maximum on-resistance of 15 mOhm at a gate drive of 10 V and 45 A drain current.

80 A continuous – the thermal ceiling in practice

The continuous drain current is 80 A at a case temperature of 25°C. That rating assumes the case is held at 25°C – in a real enclosure with a heatsink the allowable current derates as the case temperature rises.

Gate drive and switching budget

The gate threshold voltage is 4 V maximum at 250 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. Total gate charge is 120 nC at 10 V.

Package and mounting – TO-220AB

The part is through-hole mounted in a TO-220-3 package (supplier device package TO-220AB). The exposed metal tab is the drain connection; the thermal pad area on the PCB or heatsink sets the junction-to-case thermal resistance.

Frequently asked questions

What is the Vdss and Rds(on) of IRF8010PBF?

The drain-to-source voltage rating is 100 V, and the maximum on-resistance is 15 mOhm at a gate drive of 10 V and 45 A drain current.

Can IRF8010PBF handle 80 A continuous?

Yes, the continuous drain current is rated at 80 A at a case temperature of 25°C. In a real application with a heatsink, the allowable current must be derated as the case temperature rises, but the 175°C junction temperature gives substantial thermal headroom.

Is IRF8010PBF lead-free and RoHS compliant?

Yes, the IRF8010PBF is ROHS3 compliant, meaning it meets the lead-free and restricted-substance requirements of the RoHS directive.