40 V, 90 A N-channel in a DirectFET can
It comes in the DirectFET Isometric MX package, a low-profile, solderable can that provides low inductance and direct thermal path to the PCB.
Conduction loss and gate drive budget
At 90 A, the I²R loss is about 11.3 W, which must be removed through the DirectFET's solderable pad to the board copper. The 212 nC total gate charge at 10 V means the gate driver needs to source and sink a significant charge per switching cycle — a 1 A driver at 100 kHz would spend about 21% of the period charging the gate, so a higher-current driver or lower switching frequency may be needed.
Thermal and voltage headroom for the rail
The 40 V Vdss rating provides headroom for a 12 V or 24 V bus with transients, but not for a 48 V telecom rail.
Package and PCB layout
The DirectFET Isometric MX package is a surface-mount can with a large solderable drain pad on the bottom and separate source and gate pads. The 6852 pF input capacitance at 25 V Vds means the gate driver sees a capacitive load that affects switching edge rates and may require a gate resistor to control ringing.