IRF7907TRPBF, HEXFET series, dual N-channel MOSFET, 30V Vdss, 9.1A/11A Id, 16.4mOhm Rds(on) at 10V, logic-level gate, 8-SOIC package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 9.1A, 11A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.35V @ 25µA |
| Rds on (Max) @ id, vgs | 16.4mOhm @ 9.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 850pF @ 15V |
The IRF7907TRPBF is a dual N-channel HEXFET MOSFET in the 8-SOIC footprint, rated for 30 V drain-to-source and 9.1 A continuous on one channel, 11 A on the other.
Rds(on) is specified at 16.4 mOhm max with 9.1 A and a 10 V gate drive. The gate charge is 10 nC at 4.5 V, meaning the driver does not have to push much current to switch the FET.
The part is a logic-level gate device, so the on-resistance at 4.5 V will be higher — typically around 20-25 mOhm depending on junction temperature. The gate charge at 4.5 V is 10 nC, which keeps switching losses low.