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Infineon Technologies IRF7907TRPBF

IRF7907TRPBF HEXFET Dual N-Ch MOSFET, 30V, 9.1A, 16.4mOhm

MPNIRF7907TRPBF
End of Life

IRF7907TRPBF, HEXFET series, dual N-channel MOSFET, 30V Vdss, 9.1A/11A Id, 16.4mOhm Rds(on) at 10V, logic-level gate, 8-SOIC package, -55°C to 150°C.

$1.15Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7907TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C9.1A, 11A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.35V @ 25µA
Rds on (Max) @ id, vgs16.4mOhm @ 9.1A, 10V
Gate charge (Qg) (Max) @ vgs10nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds850pF @ 15V

Product details

Dual N-channel in an 8-SOIC — where it fits

The IRF7907TRPBF is a dual N-channel HEXFET MOSFET in the 8-SOIC footprint, rated for 30 V drain-to-source and 9.1 A continuous on one channel, 11 A on the other. The two independent FETs share a common source pin, so it is a natural fit for synchronous buck converters where the high-side and low-side share the same return, or for a pair of load switches on a 12 V rail where board space is tight.

16.4 mOhm at 10 V — and what it does at 4.5 V

Rds(on) is specified at 16.4 mOhm max with 9.1 A and a 10 V gate drive. The gate charge is 10 nC at 4.5 V, meaning the driver does not have to push much current to switch the FET.

Frequently asked questions

What is the Rds(on) of IRF7907TRPBF at 4.5V?

The part is a logic-level gate device, so the on-resistance at 4.5 V will be higher — typically around 20-25 mOhm depending on junction temperature. The gate charge at 4.5 V is 10 nC, which keeps switching losses low.