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Infineon Technologies IRF7862TRPBF

IRF7862TRPBF N-Channel MOSFET, 30 V, 21 A, 3.7 mOhm Rds(on)

MPNIRF7862TRPBF
End of Life

Infineon HEXFET® IRF7862TRPBF, N-Channel MOSFET, 30 V Vdss, 21 A continuous drain, 3.7 mOhm Rds(on) max at 20 A, 10 V, 45 nC gate charge, 8-SOIC package, -55°C to 150°C.

$1.18Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF7862TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs3.7mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4090 pF @ 15 V

Product details

3.7 mOhm Rds(on) — the conduction loss floor

The IRF7862TRPBF: The headline spec is the 3.7 mOhm maximum on-resistance at Vgs=10 V and Id=20 A — this sets the conduction loss floor in a synchronous buck converter or load switch. At 20 A, the I²R loss is under 1.5 W, but the 8-SOIC package dissipates only 2.5 W max at 25 °C ambient, so the board copper and airflow must carry the thermal budget.

Gate drive and switching — 45 nC at 4.5 V

Gate charge is specified at 45 nC max with Vgs=4.5 V, meaning the MOSFET can be driven from a 5 V logic rail with moderate gate-driver current. The input capacitance Ciss is 4090 pF at Vds=15 V — the driver must supply the Qg total at the target switching frequency. For a 100 kHz buck, the average gate current is 45 nC × 100 kHz = 4.5 mA, well within a standard driver's capability.

30 V Vdss — voltage headroom check

The 30 V drain-source rating gives 50 % headroom on a 12 V rail and 25 % on a 24 V rail. For 24 V systems with inductive loads or hot-plug transients, the margin is tight — a 36 V or 40 V rated part is safer if the bus sees spikes above 30 V. The gate-source maximum is ±20 V, so a Zener clamp on the gate is unnecessary for logic-level drive.

Thermal and package — 2.5 W in an 8-SOIC

The 8-SOIC (8-SO) surface-mount package limits power dissipation to 2.5 W at 25 °C ambient. At 21 A continuous drain, the on-resistance at 150 °C junction (the max operating temperature) rises to roughly 1.5× the 25 °C value — about 5.6 mOhm — pushing I²R loss to 2.5 W. The board layout must provide a low-thermal-resistance path through the copper pour and vias to keep the junction below 150 °C.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the IRF7862TRPBF?

The maximum Rds(on) is 3.7 mOhm at Vgs=10 V and Id=20 A. This is the conduction loss spec for a synchronous rectifier or load switch.

Can the IRF7862TRPBF be used for 24 V systems?

The 30 V Vdss rating provides 25 % headroom on a 24 V rail. For systems with inductive transients or hot-plug events, a 40 V rated part is recommended to avoid avalanche breakdown.