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Infineon Technologies IRF7855TRPBF
Infineon Technologies

IRF7855TRPBF HEXFET N-Channel MOSFET, 60V 12A

MPNIRF7855TRPBF
End of Life

Infineon HEXFET IRF7855TRPBF, N-Channel MOSFET, 60 V Vdss, 12 A continuous drain, 9.4 mOhm Rds(on) at 10 V, 39 nC gate charge, 8-SOIC package, -55°C to 150°C.

$1.75Ref. price · indicative, final on quote
IRF7855TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7855TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs9.4mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Product details

60 V, 12 A N-channel — where the 9.4 mOhm Rds(on) earns its keep

The Infineon IRF7855TRPBF is a 60 V, 12 A N-channel HEXFET MOSFET in an 8-SOIC package.

Gate charge and switching — 39 nC sets the drive budget

A total gate charge of 39 nC at 10 V means a 1 A gate driver can switch this FET in about 39 ns, ignoring external gate resistance. The 1560 pF input capacitance at 25 V drain-source is moderate for a 12 A device; the drive circuit should be sized for a peak current of at least 1 A to keep switching edges clean.

The 4.9 V maximum gate threshold at 100 µA drain current gives a comfortable noise margin for 10 V gate drives.

Package and footprint — 8-SOIC with standard land pattern

The supplier device package is 8-SO. Surface-mount assembly with a 2.5 W power dissipation at 25°C ambient requires a copper area on the PCB under the package to spread heat; the datasheet's thermal resistance curves assume a 1-inch-square pad.

Frequently asked questions

What is the Rds(on) of IRF7855TRPBF?

The maximum on-resistance is 9.4 mOhm at 12 A drain current with 10 V gate drive.

Is IRF7855TRPBF RoHS compliant?

Yes, it is ROHS3 compliant.

Is IRF7855TRPBF suitable for high-frequency applications?

With a total gate charge of 39 nC at 10 V, it can switch at moderate frequencies (tens to low hundreds of kHz) with a capable gate driver. For very high frequencies (above 500 kHz), a FET with lower Qg would be more efficient.