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Infineon Technologies IRF7854TRPBF
Infineon Technologies

IRF7854TRPBF HEXFET N-Channel MOSFET, 80 V, 10 A, 13.4 mOhm

MPNIRF7854TRPBF
End of Life

Infineon HEXFET IRF7854TRPBF N-Channel MOSFET, 80 Vdss, 10 A Id, 13.4 mOhm Rds(on) at 10 V, 41 nC Qg, 8-SOIC, -55 to 150 °C.

$1.55Ref. price · indicative, final on quote
IRF7854TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7854TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs13.4mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1620 pF @ 25 V

Product details

13.4 mOhm Rds(on) — the conduction loss floor

The 13.4 mOhm maximum on-resistance is specified at 10 A drain current and 10 V gate drive. At 10 A the conduction loss is 1.34 W, which sits inside the 2.5 W package dissipation limit at 25 °C — the designer has about 1.2 W of headroom before the SO-8 package becomes the bottleneck. The 41 nC total gate charge at 10 V tells the driver what current it must deliver: at 100 kHz switching frequency the average gate drive current is 4.1 mA, well within a standard gate driver's capability.

Frequently asked questions

What is the RDS(on) of IRF7854TRPBF at 10 V?

The maximum Rds(on) is 13.4 mOhm at 10 A drain current and 10 V gate drive. This is the conduction loss spec that drives heatsink and efficiency calculations in the switching node.