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Infineon Technologies IRF7853TRPBF

IRF7853TRPBF HEXFET N-Channel MOSFET, 100 V, 8.3 A, 18 mOhm

MPNIRF7853TRPBF
End of Life

IRF7853TRPBF, HEXFET series, N-Channel MOSFET, 100 V Vdss, 8.3 A continuous drain, 18 mOhm Rds(on) at 10 V, 39 nC gate charge, 8-SOIC package, -55°C to 150°C.

$1.4Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7853TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.3A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs18mOhm @ 8.3A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1640 pF @ 25 V

Product details

100 V N-channel in an SOIC-8 — conduction loss and gate drive

Gate charge and switching — 39 nC at 10 V

This is a moderate charge for a 100 V part — a standard gate driver with 1 A peak output can switch it at 50–100 kHz without excessive driver dissipation.

Temperature range — military-grade junction rating

The 2.5 W power dissipation at 25°C ambient is the board-level limit in still air — in a 150°C junction environment the allowable dissipation drops to near zero, so the thermal design must rely on the PCB copper to sink heat.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRF7853TRPBF?

The maximum Rds(on) is 18 mOhm at 8.3 A drain current with 10 V gate drive. This is the on-resistance at the rated current and gate voltage; actual resistance increases with junction temperature per the normalised curve in the datasheet.