IRF7853TRPBF

Infineon Technologies · HEXFET® Series

IRF7853TRPBF, HEXFET series, N-Channel MOSFET, 100 V Vdss, 8.3 A continuous drain, 18 mOhm Rds(on) at 10 V, 39 nC gate charge, 8-SOIC package, -55°C to 150°C.

Infineon Technologies IRF7853TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7853TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.3A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4.9V @ 100µA
Rds on (Max) @ id, vgs18mOhm @ 8.3A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1640 pF @ 25 V

Technical details

100 V N-channel in an SOIC-8 — conduction loss and gate drive

Gate charge and switching — 39 nC at 10 V

This is a moderate charge for a 100 V part — a standard gate driver with 1 A peak output can switch it at 50–100 kHz without excessive driver dissipation.

Temperature range — military-grade junction rating

The 2.5 W power dissipation at 25°C ambient is the board-level limit in still air — in a 150°C junction environment the allowable dissipation drops to near zero, so the thermal design must rely on the PCB copper to sink heat.

It is ROHS3 compliant.

IRF7853TRPBF
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