Infineon Technologies · HEXFET® Series
Infineon IRF7842TRPBF HEXFET N-Channel MOSFET, 40 V Vdss, 18 A Id, 5 mOhm Rds(on) at 10 V, 50 nC Qg, SO-8 package, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.25V @ 250µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4500 pF @ 20 V |
The IRF7842TRPBF: Rds(on) is 5 mOhm at 17 A, 10 V.
Gate charge is 50 nC at 4.5 V.
Maximum power dissipation is 2.5 W at 25 °C ambient — this is the thermal limit in still air without a heatsink.
