Skip to main content
Infineon Technologies IRF7842TRPBF

IRF7842TRPBF HEXFET N-Channel MOSFET, 40V 18A 5mOhm SO-8

MPNIRF7842TRPBF
End of Life

Infineon IRF7842TRPBF HEXFET N-Channel MOSFET, 40 V Vdss, 18 A Id, 5 mOhm Rds(on) at 10 V, 50 nC Qg, SO-8 package, -55 to 150 °C.

$1.73Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7842TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.25V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4500 pF @ 20 V

Product details

5 mOhm Rds(on) in an SO-8 — the conduction-loss ceiling

The IRF7842TRPBF: Rds(on) is 5 mOhm at 17 A, 10 V.

Gate charge and drive voltage — switching loss budget

Gate charge is 50 nC at 4.5 V. Drive voltage range for rated Rds(on) is 4.5 V to 10 V.

Package and thermal reality

Maximum power dissipation is 2.5 W at 25 °C ambient — this is the thermal limit in still air without a heatsink. For continuous operation above a few amps, the PCB copper area under the drain pins becomes the primary thermal path; a 1 oz copper pour of at least 1 square inch is typical to keep junction temperature below the 150 °C maximum.

Frequently asked questions

What are the applications of IRF7842TRPBF?

As a 40 V N-channel MOSFET with 5 mOhm Rds(on) in an SO-8, it is suited for low-voltage DC-DC converters, load switches, battery protection circuits, and motor drive half-bridges in 12 V and 24 V systems.