Infineon HEXFET® IRF7832TRPBF, N-Channel MOSFET, 30 V Vdss, 20 A Id, 4 mOhm Rds(on) at 10 V, 51 nC Qg, SOIC-8, -55 to 155 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 155°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.32V @ 250µA |
| Rds on (Max) @ id, vgs | 4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 51 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4310 pF @ 15 V |
The Infineon IRF7832TRPBF is a 30 V, 20 A N-channel HEXFET® MOSFET in an SOIC-8 package.
Total gate charge is 51 nC at 4.5 V gate drive.
The 4310 pF input capacitance at 15 V drain-source sets the switching loss component.
Maximum on-resistance is 4 mOhm at 20 A drain current with 10 V gate drive. At 4.5 V gate drive the Rds(on) is higher — the datasheet curve shows the typical value; the 4.5 V drive voltage is the lower bound for the rated on-resistance specification.
Yes, the IRF7832TRPBF is listed as ROHS3 compliant.