30 V, 20 A N-channel — where the 4 mOhm Rds(on) matters
The Infineon IRF7832TRPBF is a 30 V, 20 A N-channel HEXFET® MOSFET in an SOIC-8 package.
Gate charge and drive — sizing the gate driver
Total gate charge is 51 nC at 4.5 V gate drive. The drive voltage range spans 4.5 V to 10 V for the specified Rds(on).
Thermal and package — the SOIC-8 reality
The 4310 pF input capacitance at 15 V drain-source sets the switching loss component.
The ±20 V maximum gate-source rating provides margin against drive overshoot in noisy environments.
