Infineon Technologies · HEXFET® Series
Infineon HEXFET® N-Channel MOSFET, 200V Vdss, 3.7A Id, 78mOhm Rds(on) at 10V, 44nC Qg, 1750pF Ciss, SO-8, -55°C to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.7A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 78mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1750 pF @ 100 V |
The IRF7820TRPBF: Gate charge is 44 nC at 10 V, and input capacitance is 1750 pF at 100 V drain bias.
The IRF7820TRPBF is listed as an active part with ROHS3 compliance. There is no NRND or last-time-buy notice.
