Rds(on) and gate charge — the switching and conduction trade-off
Maximum on-resistance is 43 mOhm at 3.1 A and 10 V gate drive. Gate charge is 38 nC at 10 V.
IRF7815TRPBF
Infineon Technologies · HEXFET® Series
IRF7815TRPBF, Infineon HEXFET series, N-Channel MOSFET, 150V Vdss, 5.1A Id, 43mOhm Rds(on) at 10V, 38nC Qg, SOIC-8, -55°C to 150°C.
[IN STOCK] In Stock: 50 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.1A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 43mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1647 pF @ 75 V |
Technical details
IRF7815TRPBF
[ALLOC] verified