IRF7815TRPBF, Infineon HEXFET series, N-Channel MOSFET, 150V Vdss, 5.1A Id, 43mOhm Rds(on) at 10V, 38nC Qg, SOIC-8, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.1A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 43mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1647 pF @ 75 V |
Maximum on-resistance is 43 mOhm at 3.1 A and 10 V gate drive. Gate charge is 38 nC at 10 V.
The IRF7815TRPBF carries an Active product status and is ROHS3 compliant.
Yes — it is ROHS3 compliant, meaning it meets the lead-free and restricted-substance requirements of the EU RoHS directive.
It is supplied in an 8-SOIC surface-mount package (0.154" width, 3.90 mm body width), available in Tape & Reel or Cut Tape options.