The IRF7749L1TRPBF: The 1.5 mOhm Rds(on) at 120 A sets the conduction-loss floor for a 60 V bus switch.
Thermal limits and the DirectFET advantage
Power dissipation is rated at 3.3 W in still air at the board and 125 W at the case.
IRF7749L1TRPBF
Infineon Technologies
Infineon IRF7749L1TRPBF N-Channel MOSFET, 60 V Vdss, 1.5 mOhm max Rds(on) at 120 A, 300 nC gate charge, DirectFET Isometric L8 package, -55 to 175 °C, ROHS3 compliant.
[IN STOCK] In Stock: 141 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Ta), 200A (Tc) |
| Power dissipation | 3.3W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DirectFET™ Isometric L8 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.5mOhm @ 120A, 10V |
| Gate charge (Qg) (Max) @ vgs | 300 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 12320 pF @ 25 V |
Technical details
IRF7749L1TRPBF
[ALLOC] verified