Rds(on) at junction temperature, not 25°C
The IRF7607TRPBF is an Infineon N-channel HEXFET MOSFET rated for 20 V drain-source and 6.5 A continuous drain current. The headline Rds(on) of 30 mOhm at 6.5 A and 4.5 V is specified at 25°C junction — at 150°C junction the on-resistance roughly doubles, so a 12 V rail converter delivering 4 A continuous should budget ~60 mOhm hot resistance for the conduction loss calculation.
Gate charge and switching loss
Total gate charge Qg is 22 nC at 5 V Vgs. For a 200 kHz buck converter, the gate-drive power is roughly Qg × Vgs × fsw = 22 nC × 5 V × 200 kHz = 22 mW — well within a standard 1 A gate driver's capability. The 1.3 nF output capacitance (Coss) keeps the switching node capacitance low, reducing turn-on loss in hard-switched topologies.
Logic-level threshold and gate-drive compatibility
The ±12 V Vgs absolute maximum means a 5 V gate signal has 7 V of margin before the oxide sees stress — safe for any standard gate driver output. The 1.8 W power dissipation at 25°C ambient sets the thermal budget; a 4 A load at 60 mOhm hot Rds(on) dissipates ~1 W, leaving margin for ambient temperatures up to 85°C with adequate copper area on the PCB.
The IRF7607TRPBF is the bulk-pack variant of the IRF7607; the tape-and-reel version uses a different suffix.