Infineon Technologies IRF7 Discrete Semiconductors Series

3 variants · Infineon TechnologiesAll Discrete Semiconductors →

About the Infineon Technologies IRF7 Discrete Semiconductors Series

The Infineon Technologies IRF7 Discrete Semiconductors Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common FET type of N-Channel and mounting of Surface Mount. Variants differ by gate charge (Qg) (Max) @ vgs, rds on (Max) @ id, vgs and vgs, so you can match the exact gate charge (Qg) (Max) @ vgs your application requires using the selection guide below. All listed Infineon Technologies IRF7 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Gate charge (Qg) (Max) @ vgs: 13 nC @ 10 V · 22 nC @ 5 V · 81 nC @ 10 V
Rds on (Max) @ id, vgs: 2.3mOhm @ 81A, 10V · 30mOhm @ 6.5 A, 4.5 V · 62mOhm @ 8.9 A, 10 V
Vgs: ±12 V · ±20 V · ±20V
Capacitance_uf: 0.0005 · 0.0013
Operating temperature high: -55°C to 150°C(TJ) · -55°C to 175°C(TJ)
Power: 1.8 · 2.4
Supply voltage: 20.0 · 100.0

Shared specifications

FET type: N-Channel
Mounting: Surface Mount

Variant comparison

Parameter	IRF7483MTRPBF	IRF7607TRPBF	IRF7665S2TRPBF
Gate charge (Qg) (Max) @ vgs	81 nC @ 10 V	22 nC @ 5 V	13 nC @ 10 V
Rds on (Max) @ id, vgs	2.3mOhm @ 81A, 10V	30mOhm @ 6.5 A, 4.5 V	62mOhm @ 8.9 A, 10 V
Vgs	±20V	±12 V	±20 V
Capacitance_uf	—	0.0013	0.0005
Operating temperature high	—	-55°C to 150°C(TJ)	-55°C to 175°C(TJ)
Power	—	1.8	2.4
Supply voltage	—	20.0	100.0

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