Infineon HEXFET series, P-Channel MOSFET, 30 V Vdss, 3.6 A Id, 90 mOhm Rds(on) at 10 V, 30 nC Qg, -55°C to 150°C, Micro8 package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.6A (Ta) |
| Power dissipation | 1.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-TSSOP, 8-MSOP (0.118\", 3.00mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 90mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 520 pF @ 25 V |
The IRF7606TRPBF: Gate drive voltage can be as low as 4.5 V for a higher Rds(on), or 10 V for the minimum specified value; the 30 nC total gate charge at 10 V means a 100 kHz PWM duty cycle draws about 3 mA from the gate driver.
ROHS3 compliance is confirmed, so the part meets the EU Restriction of Hazardous Substances directive for lead-free soldering processes.
The datasheet is the primary source for technical specs, pinout, and application guidance needed by design engineers and maintenance techs.
Sourcing buyers need to know authorized distributors and availability to place orders and avoid counterfeit parts.
Lifecycle status determines if the part is still in production, affects long-term availability, and influences cross-referencing decisions.
Pricing is critical for BOM cost estimation and comparison with alternatives in procurement decisions.
Design engineers need Vds, Rds(on), gate charge, and package details to validate fit in their circuit.
Stock availability directly impacts lead time and production schedules, a top priority for sourcing buyers.