90 mOhm Rds(on) at 10 V — conduction loss budget
The IRF7606TRPBF: Gate drive voltage can be as low as 4.5 V for a higher Rds(on), or 10 V for the minimum specified value; the 30 nC total gate charge at 10 V means a 100 kHz PWM duty cycle draws about 3 mA from the gate driver.
The 520 pF input capacitance at 25 V Vds is moderate — the gate drive circuit sees a capacitive load that is easy to drive with a standard MOSFET driver or a microcontroller GPIO through a series resistor.
Active production, ROHS3 compliant
ROHS3 compliance is confirmed, so the part meets the EU Restriction of Hazardous Substances directive for lead-free soldering processes.
