30 mOhm at 4.5 V gate drive — conduction loss anchor
The IRF7530TRPBF is a dual N-channel HEXFET MOSFET in a Micro8 package, rated for 20 V drain-source and 5.4 A continuous drain current. The 30 mOhm maximum on-resistance at 4.5 V gate drive sets the conduction loss floor.
Gate charge and switching speed
Total gate charge is 26 nC at 4.5 V. This suits high-frequency DC-DC converters where dead-time losses matter.
Thermal range and package reality
The Micro8 package dissipates 1.3 W maximum — the board copper area under the die pad sets the real thermal resistance.