Dual N/P-channel MOSFET in a Micro8 footprint
The IRF7509TRPBF from Infineon's HEXFET series integrates both an N-channel and a P-channel enhancement-mode MOSFET in a single Micro8 package. The N-channel side is rated for 2.7 A continuous drain current, the P-channel side for 2 A, both at 25°C case temperature.
Logic-level gate drive — no separate driver needed
With a maximum gate threshold voltage of 1 V at 250 µA, the IRF7509TRPBF qualifies as a logic-level gate device. The 12 nC maximum gate charge at 10 V keeps switching losses manageable.
At the rated 2.7 A N-channel current, conduction loss (I²R) reaches about 800 mW, which sits within the 1.25 W total power dissipation limit of the Micro8 package. For the P-channel side at 2 A, the conduction loss is roughly 440 mW, leaving thermal headroom for both channels operating simultaneously.