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Infineon Technologies IRF7503TRPBF

IRF7503TRPBF HEXFET Dual N-Ch MOSFET, 30V 2.4A Logic Level

MPNIRF7503TRPBF
End of Life

IRF7503TRPBF, Infineon HEXFET series, dual N-channel MOSFET, 30V Vdss, 2.4A Id, 135mOhm Rds(on) at 10V, logic-level gate, Micro8 package, -55°C to 150°C.

$0.65Ref. price · indicative, final on quote
Infineon Technologies IRF7503TRPBF datasheet (PDF)
Packaging8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7503TRPBF specifications
ParameterValue
SeriesHEXFET®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.4A
Power - max1.25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-TSSOP, 8-MSOP (0.118\", 3.00mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs135mOhm @ 1.7A, 10V
Gate charge (Qg) (Max) @ vgs12nC @ 10V
Input capacitance (Ciss) (Max) @ vds210pF @ 25V

Product details

Dual N-channel in a Micro8 — space-constrained load switching

The IRF7503TRPBF: It packs two independent switching channels into a single Micro8 surface-mount package, cutting board area in half compared to two discrete SOT-23s. The logic-level gate threshold is 1V max at 250µA.

On-resistance is 135 mOhm maximum at 1.7A with a 10V gate drive. The 1.25W total package power limit applies. Total gate charge per channel is 12 nC at 10V. Input capacitance (Ciss) is 210 pF at 25V drain-source, which is low enough that the gate drive sees a negligible reactive load at moderate frequencies.

Junction temperature range — where this part lives

It can sit in an engine bay, a rooftop telecom enclosure, or a downhole tool without the die cracking or the bond wires fatiguing.

The Micro8 package ships on Tape & Reel or Cut Tape.

Frequently asked questions

Is IRF7503TRPBF a logic level gate MOSFET?

Yes, the IRF7503TRPBF is a logic-level gate MOSFET. Its maximum gate threshold voltage is 1V at 250µA drain current, so a 3.3V or 5V logic signal fully enhances the channel without a separate gate driver.