15 mOhm at 5.6 A — the conduction-loss floor
The IRF7493TRPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET series, built on a planar stripe trench process. The 80 V drain-source rating gives headroom for 48 V nominal rails and 60 V telecom buses, but the margin above 60 V is thin — expect to clamp any ringing above 75 V with an RCD snubber or a TVS across the drain-source.
Gate charge and switching speed
Total gate charge is 53 nC at 10 V, putting this in the moderate-speed class. A standard gate driver sourcing 1 A can switch it in about 53 ns, which supports switching frequencies up to a few hundred kHz before gate-drive losses dominate the thermal budget. Input capacitance is 1510 pF at 25 V drain-source — this loads the driver output, so check the driver's peak current capability if you are pushing above 200 kHz.
Thermal reality in an 8-SOIC
The 9.3 A continuous drain current is rated at a case temperature of 25 °C. In a real board with the 2.5 W dissipation limit, the usable current will be lower — expect to derate to about 4–5 A in still air at 70 °C ambient with minimal copper on the drain pads.
ROHS3 compliant, so it fits lead-free assembly lines without exemption paperwork.