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Infineon Technologies IRF7480MTRPBF

IRF7480MTRPBF N-Channel MOSFET, 40V, 217A, 1.2 mOhm Rds(on)

MPNIRF7480MTRPBF
End of Life

Infineon HEXFET, StrongIRFET N-Channel MOSFET, 40 V drain, 217 A continuous, 1.2 mOhm at 10 V, 185 nC gate charge, -55 to 150 °C, DirectFET Isometric ME surface mount.

$2.49Ref. price · indicative, final on quote
Infineon Technologies IRF7480MTRPBF datasheet (PDF)
PackagingDirectFET™ Isometric ME
RoHSROHS3 Compliant
SeriesHEXFET®, StrongIRFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7480MTRPBF specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C217A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric ME
Vgs(th) (Max) @ id3.9V @ 150µA
Rds on (Max) @ id, vgs1.2mOhm @ 132A, 10V
Gate charge (Qg) (Max) @ vgs185 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6680 pF @ 25 V

Product details

The IRF7480MTRPBF is a 40 V N-channel MOSFET from Infineon's HEXFET and StrongIRFET series. The 217 A continuous drain rating at 25 °C case temperature is a package-limited figure.

DirectFET Isometric ME — package implications for the PCB layout

The DirectFET Isometric ME package is a can-style, solderable-topside device with a large copper clip that replaces bond wires. The source and drain connections are on the bottom of the package; the gate is a small pad on the edge.

Gate charge and drive voltage — sizing the gate driver

The total gate charge is 185 nC at 10 V. The drive voltage range is 6 V to 10 V for achieving the rated Rds(on). The maximum gate-source voltage is ±20 V.

Temperature grade and thermal budget

The maximum power dissipation is 96 W at the case temperature. The input capacitance is 6680 pF at 25 V drain-source.

Frequently asked questions

What is the Rds(on) of IRF7480MTRPBF?

The maximum Rds(on) is 1.2 mOhm at 132 A drain current with a 10 V gate-source voltage. This is the conduction loss spec that defines the part's efficiency in high-current paths.

What is the gate charge of IRF7480MTRPBF?

This determines the gate drive power requirement — at 500 kHz switching frequency, the average gate drive current is about 92.5 mA.