1.2 mOhm Rds(on) — the conduction loss floor for high-current rails
The IRF7480MTRPBF is a 40 V N-channel MOSFET from Infineon's HEXFET and StrongIRFET series. At 10 V gate drive, the maximum Rds(on) is 1.2 mOhm at 132 A drain current. The 217 A continuous drain rating at 25 °C case temperature is a package-limited figure.
DirectFET Isometric ME — package implications for the PCB layout
The DirectFET Isometric ME package is a can-style, solderable-topside device with a large copper clip that replaces bond wires. The source and drain connections are on the bottom of the package; the gate is a small pad on the edge.
Gate charge and drive voltage — sizing the gate driver
The total gate charge is 185 nC at 10 V. The drive voltage range is 6 V to 10 V for achieving the rated Rds(on). The maximum gate-source voltage is ±20 V.
Temperature grade and thermal budget
The operating junction temperature range is -55°C to 150°C. The maximum power dissipation is 96 W at the case temperature. The input capacitance is 6680 pF at 25 V drain-source.