IRF7469TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRF7469TRPBF, N-Channel MOSFET, 40 V Vdss, 9 A continuous drain, 17 mOhm Rds(on) at 10 V, 8-SOIC package, -55°C to 150°C operating temperature.

Infineon Technologies IRF7469TRPBF
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[IN STOCK] In Stock: 289 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7469TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2000 pF @ 20 V

Technical details

IRF7469TRPBF
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