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Infineon Technologies IRF7465TRPBF

IRF7465TRPBF HEXFET N-Channel MOSFET, 150 V, 1.9 A, SO-8

MPNIRF7465TRPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRF7465TRPBF, 150 V Vdss, 1.9 A continuous drain, 280 mOhm Rds(on) at 10 V, 15 nC gate charge, SO-8 package, -55 to 150 °C.

$0.94Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7465TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.9A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs280mOhm @ 1.14A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 25 V

Product details

150 V N-channel in an SO-8 — where the rating limits bite

It targets 48 V to 100 V bus rails in DC-DC converters, flyback supplies, and load switches where the board area is tight and the thermal path runs through the PCB copper.

The 280 mOhm maximum on-resistance is specified at Vgs=10 V and 1.14 A. The gate threshold is 5.5 V maximum at 250 µA, but the Rds(on) is only guaranteed at 10 V. Gate charge is 15 nC at 10 V, which keeps the drive current modest — about 1.5 mA per 100 kHz of switching frequency.

Thermal budget in an SO-8 — the copper is the heatsink

The maximum power dissipation is 2.5 W at 25 °C ambient, but that number assumes a standard FR-4 board with minimal copper. In practice, the SO-8 package relies on the PCB copper pour on the drain pads to conduct heat away. The junction temperature range is -55 to 150 °C, which qualifies the part for industrial environments and automotive under-hood zones where ambient heat can exceed 85 °C. The 150 °C ceiling is the absolute limit — derate the continuous current above 25 °C per the datasheet curve.

Input capacitance and switching speed

Input capacitance (Ciss) is 330 pF typical at Vds=25 V. That is moderate for a 150 V FET — it keeps the gate drive energy per cycle low, but it also means the Miller plateau is narrow enough that a 10–15 Ω gate resistor is usually enough to control ringing without slowing the edge too much.

Frequently asked questions

Is IRF7465TRPBF RoHS compliant?

Yes, the IRF7465TRPBF is ROHS3 compliant.