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IRF7458TRPBF

IRF7458TRPBF HEXFET N-Channel MOSFET, 30 V, 14 A, 8 mOhm

MPNIRF7458TRPBF
End of Life

Infineon HEXFET IRF7458TRPBF, N-Channel MOSFET, 30 Vdss, 14 A, 8 mOhm Rds(on) at 16 V, 8-SOIC package, -55°C to 150°C junction temperature.

$1.74Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7458TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V, 16V
Current - continuous drain (Id) @ 25°C14A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 14A, 16V
Gate charge (Qg) (Max) @ vgs59 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2410 pF @ 15 V

Product details

8 mOhm at 14 A — the conduction-loss story

That means a 10 V gate drive gets you close to the rated on-resistance; going to 16 V knocks it down to the 8 mOhm floor. Input capacitance is 2410 pF at 15 V drain — a standard gate driver with a few ohms of series resistance will switch it cleanly in the 100–500 kHz range without excessive ringing.

Temperature range and field fit

It will sit in an avionics bay, a downhole tool, or an outdoor telecom rectifier without derating the junction temperature spec — though the 2.5 W power dissipation at 25°C ambient (Ta) means the board copper area and airflow set the real thermal limit, not the die.

Frequently asked questions

Is IRF7458TRPBF lead-free?

The suffix 'PBF' in the order code indicates lead-free (Pb-free) construction.