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Infineon Technologies IRF7424TRPBF
Infineon Technologies

IRF7424TRPBF P-Channel MOSFET, 30 V, 11 A, 13.5 mOhm

MPNIRF7424TRPBF
End of Life

Infineon HEXFET® IRF7424TRPBF, P-Channel MOSFET, 30 V Vdss, 11 A Id, 13.5 mOhm Rds(on) at 10 V, SOIC-8 surface mount, -55°C to 150°C.

$1.4Ref. price · indicative, final on quote
IRF7424TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7424TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4030 pF @ 25 V

Product details

On-resistance and gate drive — what the numbers mean

The IRF7424TRPBF: Rds(on) is specified at 13.5 mOhm max with 11 A drain current and 10 V gate-source. For a 12 V battery-ORing design running at 5 A, the conduction loss at 10 V drive is under 0.4 W, well within the 2.5 W power dissipation limit at 25°C ambient. Gate charge is 110 nC at 10 V. This part is suited to DC or low-frequency switching.

Package and mounting

The 8-SOIC package has a 0.154-inch width. The copper pad on the PCB under the body is the primary heat path. Operating junction temperature range is -55°C to 150°C. The 2.5 W power dissipation at 25°C ambient assumes a standard board with minimal copper.

Frequently asked questions

What is the Rds(on) of IRF7424TRPBF?

The maximum on-resistance is 13.5 mOhm at 11 A drain current with a 10 V gate-source voltage. At 4.5 V gate drive the Rds(on) will be higher — the datasheet curve should be consulted for the exact value at lower gate voltages.

Is IRF7424TRPBF suitable for high-frequency switching?

This part is better suited to DC or low-frequency applications such as load switches, battery protection, and power-rail sequencing.