IRF7416TRPBF, HEXFET® P-Channel MOSFET, 30V Vdss, 10A continuous drain, 20 mOhm Rds(on) at 10V Vgs, 92 nC gate charge, SO-8 (8-SOIC) package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 92 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 25 V |
At a 10 V gate drive, the IRF7416TRPBF delivers a maximum on-resistance of 20 mOhm at 5.6 A.
It carries ROHS3 compliance, so it meets the current EU RoHS directive without exemptions. For a BOM freeze or a PCN watch, this part is not on a last-time-buy horizon — you can qualify it into new designs with confidence that the supply chain will remain open.
Yes, it is ROHS3 compliant, meaning it meets the EU RoHS directive with no exemptions for lead or other restricted substances in the package.