Infineon Technologies · HEXFET® Series
IRF7416TRPBF, HEXFET® P-Channel MOSFET, 30V Vdss, 10A continuous drain, 20 mOhm Rds(on) at 10V Vgs, 92 nC gate charge, SO-8 (8-SOIC) package, -55 to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 92 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 25 V |
At a 10 V gate drive, the IRF7416TRPBF delivers a maximum on-resistance of 20 mOhm at 5.6 A.
It carries ROHS3 compliance, so it meets the current EU RoHS directive without exemptions. For a BOM freeze or a PCN watch, this part is not on a last-time-buy horizon — you can qualify it into new designs with confidence that the supply chain will remain open.