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Infineon Technologies IRF7410TRPBF

IRF7410TRPBF P-Channel MOSFET, 12V 16A

MPNIRF7410TRPBF
End of Life

Infineon HEXFET IRF7410TRPBF, P-Channel MOSFET, 12V Vdss, 16A continuous drain, 7mOhm Rds(on) at 4.5V gate drive, 91 nC gate charge, -55°C to 150°C junction, 8-SOIC package.

$1.13Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF7410TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C16A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 16A, 4.5V
Gate charge (Qg) (Max) @ vgs91 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds8676 pF @ 10 V

Product details

Low-voltage P-channel for 12V rails — what the 7 mOhm Rds(on) means

The headline figure is the 7 mOhm maximum on-resistance at a 4.5 V gate drive — that is the spec that decides conduction loss in a 12 V load switch or battery OR-ing application. A 7 mOhm Rds(on) at 16 A dissipates under 1.8 W at rated current, which keeps the junction within the 2.5 W package limit in an 8-SOIC footprint. The part is designed for surface-mount assembly in an 8-SOIC (0.154" body width) package, supplier device package 8-SO.

Gate drive and switching — 5 V logic compatible

The drive voltage range spans 1.8 V to 4.5 V for minimum and maximum Rds(on), and the gate threshold is 900 mV max at 250 µA. The 91 nC total gate charge at 4.5 V is the figure the switching-loss calculation uses; at 100 kHz switching frequency the average gate-drive current works out to about 9 mA, well within a standard microcontroller GPIO or a small gate-driver IC. Input capacitance Ciss is 8676 pF at 10 V drain bias. This is a moderate-Qg part — not a fast-switching device, but fine for load switching, soft-start, or low-frequency PWM up to a few tens of kilohertz.

Frequently asked questions

Is IRF7410TRPBF suitable for 5V gate drive?

Yes. The Rds(on) is specified at a 4.5 V gate drive, and the threshold voltage is 900 mV max. A 5 V logic-level signal fully enhances the channel without needing a separate gate-driver IC.