At 2.8 A load current, the 45 mΩ maximum on-resistance translates to roughly 0.35 W conduction loss at 25°C junction. That is within the 2.5 W package dissipation limit, but thermal design still needs attention — the 8-SOIC relies on the PCB copper for heat spreading.
IRF7406GTRPBF P-Channel MOSFET, 30 V, 5.8 A, 45 mΩ
MPNIRF7406GTRPBF
Obsolete
Infineon IRF7406GTRPBF, P-Channel HEXFET® MOSFET, 30 V Vdss, 5.8 A Id, 45 mΩ Rds(on) @ 2.8 A, 10 V, 8-SOIC, -55°C to 150°C.
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.8A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 45mOhm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 59 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 25 V |