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IRF7402TR

IRF7402TR N-Channel MOSFET, 20V, 6.8A, 35mOhm, Obsolete

MPNIRF7402TR
Obsolete

Infineon IRF7402TR, HEXFET® Series, N-Channel MOSFET, 20V Vdss, 6.8A Id, 35mOhm Rds(on) at 4.5V, 8-SOIC package, -55°C to 150°C.

Infineon Technologies IRF7402TR datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7402TR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.7V, 4.5V
Current - continuous drain (Id) @ 25°C6.8A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id700mV @ 250µA (Min)
Rds on (Max) @ id, vgs35mOhm @ 4.1A, 4.5V
Gate charge (Qg) (Max) @ vgs22 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds650 pF @ 15 V

Product details

20 V N-Channel HEXFET in SOIC-8 — logic-level switching

The gate threshold voltage is specified with a minimum of 700 mV at 250 µA, and the device is driven with logic-level gate voltages down to 2.7 V for the minimum on-resistance. On-resistance is 35 mOhm maximum at 4.5 V gate drive with 4.1 A drain current, making it efficient for moderate-current rails where the gate drive is limited to 5 V or less.

Obsolete — last-time-buy and surplus-channel sourcing

For a BOM line that calls out this exact MPN, procurement must rely on independent-distribution surplus stock, broker channels, or last-time-buy inventory.

Key ratings for switching and thermal design

Gate charge is 22 nC at 4.5 V, which sets the drive requirement for the gate driver — a figure that matters when estimating switching losses at higher frequencies. Input capacitance at 15 V drain-source is 650 pF, a parameter for the driver's peak current capability and for predicting turn-on delay.

Frequently asked questions

What is the replacement for IRF7402TR?

For a pin-compatible alternative in the same 20 V, 6.8 A class, review other N-Channel logic-level MOSFETs in the 8-SOIC package from Infineon's current HEXFET portfolio — parametric cross-reference is needed to match Rds(on) and gate charge. No specific replacement code is provided here.