Complementary pair in a single SOIC-8
The IRF7389TRPBF from Infineon's HEXFET series integrates both an N-channel and a P-channel MOSFET in one 8-SOIC package, saving board area in applications that need a complementary half-bridge or a load switch with level-shifted gate drive.
At 29 mOhm max (N-channel) the conduction loss at 5 A is under 0.75 W, but the total gate charge of 33 nC at 10 V means the driver must supply about 33 nC per switching cycle — at 500 kHz that is 16.5 mA average gate drive current, well within a typical MOSFET driver's capability. Input capacitance Ciss is 650 pF at 25 V drain bias, which together with the gate charge defines the switching speed; the 8-SOIC package's 2.5 W power dissipation ceiling limits how fast you can switch at high duty cycles without exceeding the junction temperature rating.