IRF7380TRPBF, HEXFET® series, dual N-channel MOSFET, 80V Vdss, 3.6A continuous drain, 73mOhm Rds(on) at 10V, logic-level gate, SOIC-8 package, -55°C to 150°C operating temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| Mounting type | Surface Mount |
| Drain to source voltage | 80V |
| Current - continuous drain (Id) @ 25°C | 3.6A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 73mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 660pF @ 25V |
Gate charge is 23nC at 10V, and input capacitance is 660pF at 25V drain. A standard MCU GPIO with a series resistor can drive it into the low hundreds of kHz.
The IRF7380TRPBF is listed as Active with ROHS3 compliance. For a BOM freeze or a new design, this is a current-production part with no near-term obsolescence risk. We source it through independent distribution and quote firm pricing and availability against an RFQ.
Maximum Rds(on) is 73mOhm at 2.2A drain current with 10V gate drive. Maximum gate charge is 23nC at 10V.
The dual 80V, 3.6A N-channel MOSFET is suited for DC-DC converters, load switches, small motor drives, and battery management in industrial, telecom, and automotive-adjacent systems where board space is tight.
Yes. It is a logic-level gate device with a maximum threshold voltage of 4V at 250µA, allowing direct drive from 3.3V or 5V logic.