Infineon Technologies · HEXFET® Series
IRF7380TRPBF, HEXFET® series, dual N-channel MOSFET, 80V Vdss, 3.6A continuous drain, 73mOhm Rds(on) at 10V, logic-level gate, SOIC-8 package, -55°C to 150°C operating temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 80V |
| Current - continuous drain (Id) @ 25°C | 3.6A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 73mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 660pF @ 25V |
Gate charge is 23nC at 10V, and input capacitance is 660pF at 25V drain. A standard MCU GPIO with a series resistor can drive it into the low hundreds of kHz.
For a BOM freeze or a new design, this is a current-production part with no near-term obsolescence risk. We source it through independent distribution and quote firm pricing and availability against an RFQ.
