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Infineon Technologies IRF7351TRPBF
Infineon Technologies

IRF7351TRPBF HEXFET Dual N-Ch 60V 8A MOSFET, 17.8mOhm

MPNIRF7351TRPBF
End of Life

Infineon IRF7351TRPBF HEXFET, Dual N-Channel 60V 8A MOSFET, 17.8mOhm @ 10V, Logic Level Gate, SOIC-8, -55°C to 150°C.

$1.62Ref. price · indicative, final on quote
IRF7351TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF7351TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
Mounting typeSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C8A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 50µA
Rds on (Max) @ id, vgs17.8mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs36nC @ 10V
Input capacitance (Ciss) (Max) @ vds1330pF @ 30V

Product details

The IRF7351TRPBF: The two MOSFETs share a common substrate in the 8-SO package, coupling the thermal path. Total power dissipation is 2W for the combined die. The logic-level gate threshold (Vgs(th) max of 4V at 50µA) allows drive from 5V logic. On-resistance is specified at 10V gate drive.

Switching parasitics and the 8-SO footprint

Total gate charge is 36nC at 10V. Input capacitance is 1330pF at 30V Vds. At 150°C junction, Rds(on) roughly doubles from the 25°C value — factor 1.6 to 2x into your thermal derating calculation. The 2W package limit assumes the board copper area recommended in the application note; a two-layer board with minimal copper pour will not hit that ceiling.

The part is ROHS3 compliant, which simplifies compliance for EU and RoHS-regulated markets.

Frequently asked questions

Is IRF7351TRPBF a logic level gate MOSFET?

Yes, the IRF7351TRPBF has a logic-level gate feature. The maximum gate threshold voltage is 4V at 50µA drain current, which means a 5V logic signal can turn the MOSFET on, though the specified on-resistance of 17.8mOhm is at 10V gate drive.

What is the Rds(on) of IRF7351TRPBF at 10V?

The maximum on-resistance is 17.8mOhm at 8A drain current with 10V gate drive. This is the datasheet-listed value at 25°C junction temperature; expect the resistance to increase with temperature, approximately doubling at 150°C junction.

What packaging options are available for IRF7351TRPBF?

The device package is 8-SOIC (0.154", 3.90mm width), supplier device package 8-SO.