Complementary N/P-channel in one SO-8
The IRF7343TRPBF integrates an N-channel and a P-channel MOSFET in a single 8-SOIC package, rated for a drain-to-source voltage of 55 V. The N-channel side handles 4.7 A continuous drain current; the P-channel side is rated at 3.4 A. On-resistance is 50 mOhm maximum for the N-channel at Vgs = 10 V and 4.7 A. This dual configuration lets one device replace two separate MOSFETs in half-bridge topologies, synchronous rectifier stages, or bidirectional load switches — cutting component count and PCB area.
Thermal budget in SO-8
Maximum power dissipation is 2 W in the SO-8 package. That 2 W ceiling sets the practical continuous current well below the 4.7 A / 3.4 A ratings unless the board provides generous copper area on the drain pads. For a 55 V rail, the Rds(on) at elevated junction temperature rises roughly 50 % above the 25 °C value — factor that into the thermal loop when sizing the load.
Gate drive and switching
Total gate charge is 36 nC at Vgs = 10 V, with an input capacitance of 740 pF at Vds = 25 V. A 10 V gate drive is needed to reach the rated Rds(on); the threshold voltage is 1 V maximum at 250 µA drain current. The gate charge is moderate — a standard 1 A gate driver can switch the pair at 100–200 kHz without excessive drive loss.
Lifecycle and sourcing
Product status is Active with ROHS3 compliance. No official second source or direct replacement is listed in the manufacturer's cross-reference; the SO-8 footprint is common, so a parametric search for a complementary N/P-channel MOSFET in the same package is straightforward if a dual-source qualification is needed.