Infineon HEXFET IRF7341TRPBF, dual N-channel logic-level MOSFET, 55V Vdss, 4.7A Id, 50mOhm Rds(on) at 10V, 8-SOIC package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting type | Surface Mount |
| Drain to source voltage | 55V |
| Current - continuous drain (Id) @ 25°C | 4.7A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 4.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 740pF @ 25V |
The IRF7341TRPBF packs two N-channel HEXFET transistors into one 8-SOIC, rated for 55 V drain-source and 4.7 A continuous drain current per channel at 25 °C.
Total gate charge is 36 nC at 10 V, so switching losses stay manageable even at moderate frequencies — the input capacitance of 740 pF at 25 V drain-source gives a quick estimate of the gate-drive current needed.
The maximum on-resistance is 50 mOhm when tested at 4.7 A drain current with a 10 V gate-source voltage.