Dual N-channel in an 8-SOIC — where it saves board space
The IRF7341GTRPBF packs two independent N-channel HEXFET MOSFETs into a single surface-mount package. The dual configuration halves the component count for a half-bridge or dual load-switch layout compared to two discrete SO-8 devices.
50 mOhm on-resistance — what it costs in heat
Maximum on-resistance is 50 mOhm at 5.1 A drain current with 10 V gate drive. At that current, conduction loss per channel is I²R = 1.3 W, which sits within the 2.4 W package power limit but leaves little headroom for ambient above 70°C without airflow or a copper-spread thermal plane on the PCB.
Gate charge and switching speed
Total gate charge is 44 nC at 10 V gate voltage. The 780 pF input capacitance at 25 V drain-source helps keep the Miller plateau short.
Temperature range and storage
The 175°C absolute maximum junction temperature is specified.
Lifecycle and sourcing
No official pin-compatible second source is listed, so dual-sourcing requires a full qualification of any alternate part.