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IRF7329TRPBF

IRF7329TRPBF Dual P-Channel MOSFET, 12V 9.2A 17mOhm

MPNIRF7329TRPBF
End of Life

Infineon HEXFET IRF7329TRPBF, dual P-Channel MOSFET, 12V Vdss, 9.2A Id, 17mOhm Rds(on) at 4.5V, Logic Level Gate, 8-SOIC, -55°C to 150°C.

$1.63Ref. price · indicative, final on quote
Infineon Technologies IRF7329TRPBF datasheet (PDF)
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7329TRPBF specifications
ParameterValue
SeriesHEXFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage12V
Current - continuous drain (Id) @ 25°C9.2A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 9.2A, 4.5V
Gate charge (Qg) (Max) @ vgs57nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds3450pF @ 10V

Product details

Dual P-channel pair for 12 V load switching

The IRF7329TRPBF is a dual P-channel MOSFET from Infineon's HEXFET series, rated for 12 V drain-to-source and 9.2 A continuous drain current per channel at 25°C. The two P-channel FETs share a common source in an 8-SOIC package, making it a compact choice for high-side load switching, battery protection, or power-rail OR-ing in portable and industrial gear.

Logic-level gate drive — 17 mOhm at 4.5 Vgs

Maximum on-resistance is 17 mOhm at 9.2 A with 4.5 Vgs — this is the conduction loss figure to budget for in the thermal calculation at your operating current. Gate charge totals 57 nC at 4.5 Vgs, and input capacitance is 3450 pF at 10 Vds. For a switching application, the gate-drive source must supply the peak current to charge that capacitance within the target rise time; at moderate frequencies (below 100 kHz) a standard GPIO with a series resistor handles it cleanly.

Thermal and package — 8-SOIC with 2 W dissipation

Maximum power dissipation is 2 W for the dual die inside the 8-SOIC (150-mil body, 3.90 mm width).

Frequently asked questions

What is the Rds(on) of the IRF7329TRPBF?

Maximum Rds(on) is 17 mOhm at 9.2 A drain current with 4.5 V gate-to-source voltage. This is the on-resistance at the logic-level gate drive condition — the actual value will be lower at higher Vgs and rises with junction temperature.

What package and footprint does the IRF7329TRPBF use?

The IRF7329TRPBF comes in an 8-SOIC package (0.154-inch body width, 3.90 mm), surface-mount, with the supplier device package designation 8-SO. The standard SOIC-8 footprint applies.