Infineon HEXFET IRF7328TRPBF, dual P-Channel MOSFET, 30V Vdss, 8A Id, 21mOhm Rds(on) at 10V, logic-level gate, 2W, -55°C to 150°C, 8-SOIC package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 21mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 78nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2675pF @ 25V |
The IRF7328TRPBF is a dual P-channel HEXFET MOSFET in an 8-SOIC package.
That removes a dedicated gate-driver IC from the BOM and simplifies the layout on a two-layer board.
ROHS3 compliance is confirmed, so it passes the environmental screening for EU and North American builds without an exemption review.
It is a dual P-channel HEXFET MOSFET rated at 30 V drain-source, 8 A continuous drain current, 21 mOhm maximum Rds(on) at 10 V gate drive, with a logic-level gate threshold of 2.5 V max at 250 µA.
Yes, the IRF7328TRPBF is ROHS3 compliant.