Infineon Technologies · HEXFET® Series
Infineon HEXFET series IRF7324TRPBF, dual P-channel logic-level MOSFET, 20V Vdss, 9A continuous drain current, 18mOhm Rds(on) at 4.5V Vgs, 8-SOIC package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 9A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 9A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 63nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 2940pF @ 15V |
The IRF7324TRPBF: The package houses two independent P-channel die.
Rds(on) is 18 mOhm max at 9 A and 4.5 V. Gate charge is 63 nC at 5 V. Input capacitance is 2940 pF at 15 V drain-source.
Surface-mount assembly is standard for reflow processes.
