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Infineon Technologies IRF7324TRPBF

IRF7324TRPBF HEXFET Dual P-Ch MOSFET, 20V 9A, 18mOhm

MPNIRF7324TRPBF
End of Life

Infineon HEXFET series IRF7324TRPBF, dual P-channel logic-level MOSFET, 20V Vdss, 9A continuous drain current, 18mOhm Rds(on) at 4.5V Vgs, 8-SOIC package, -55°C to 150°C junction temperature.

$1.55Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7324TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET type2 P-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C9A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 9A, 4.5V
Gate charge (Qg) (Max) @ vgs63nC @ 5V
Input capacitance (Ciss) (Max) @ vds2940pF @ 15V

Product details

Dual P-channel logic-level switch for low-voltage rails

The IRF7324TRPBF: The package houses two independent P-channel die.

18 mOhm at 4.5 V — conduction loss floor

Rds(on) is 18 mOhm max at 9 A and 4.5 V. Gate charge is 63 nC at 5 V. Input capacitance is 2940 pF at 15 V drain-source.

Surface-mount assembly is standard for reflow processes.

Frequently asked questions

What is the datasheet for IRF7324TRPBF?

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What is the equivalent of IRF7324TRPBF for replacement?

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What is the pinout of IRF7324TRPBF?

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