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IRF7319TRPBF

IRF7319TRPBF HEXFET N/P-Channel MOSFET, 30V, 29mOhm

MPNIRF7319TRPBF
End of Life

IRF7319TRPBF, HEXFET series, N and P-Channel MOSFET, 30V Vdss, 29mOhm Rds(on) at 5.8A, 10V, 2W, 8-SOIC, -55°C to 150°C.

$1.31Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7319TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds650pF @ 25V

Product details

Complementary pair in one 8-SOIC — what it saves you

The IRF7319TRPBF from the HEXFET series packs an N-channel and a P-channel MOSFET into a single 8-SOIC package. That complementary pair saves you a second part number on the BOM and cuts board area in half-bridge, push-pull, or synchronous-rectifier stages where you need both polarities. That Rds(on) figure is the one to size your conduction losses against — at 5.8 A continuous, expect about 0.97 W dissipation per channel before the 2 W package limit becomes the constraint.

The 8-SOIC copper pad area under the die sets the thermal resistance — keep the PCB copper pour generous to stay below the 150°C limit at full load.

Lifecycle and sourcing — no LTB worry here

No last-time-buy deadline to track, no scramble for surplus stock. ROHS3 compliant per the listing, so it clears the current EU restriction directive without an exemption.

Frequently asked questions

Is IRF7319TRPBF RoHS compliant?

Yes, the listing confirms ROHS3 compliance. No exemptions needed for the current directive.