IRF7319TRPBF

Infineon Technologies · HEXFET® Series

IRF7319TRPBF, HEXFET series, N and P-Channel MOSFET, 30V Vdss, 29mOhm Rds(on) at 5.8A, 10V, 2W, 8-SOIC, -55°C to 150°C.

IRF7319TRPBF
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[IN STOCK] In Stock: 2,743 pcs
$0.81/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7319TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds650pF @ 25V

Technical details

Complementary pair in one 8-SOIC — what it saves you

The IRF7319TRPBF from the HEXFET series packs an N-channel and a P-channel MOSFET into a single 8-SOIC package. That complementary pair saves you a second part number on the BOM and cuts board area in half-bridge, push-pull, or synchronous-rectifier stages where you need both polarities. That Rds(on) figure is the one to size your conduction losses against — at 5.8 A continuous, expect about 0.97 W dissipation per channel before the 2 W package limit becomes the constraint.

The 8-SOIC copper pad area under the die sets the thermal resistance — keep the PCB copper pour generous to stay below the 150°C limit at full load.

Lifecycle and sourcing — no LTB worry here

No last-time-buy deadline to track, no scramble for surplus stock. ROHS3 compliant per the listing, so it clears the current EU restriction directive without an exemption.

IRF7319TRPBF
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