IRF7317TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRF7317TRPBF, complementary N- and P-channel MOSFET, 20V Vdss, 6.6A / 5.3A continuous drain, 29mOhm Rds(on) at 4.5V, logic-level gate, SOIC-8 package, -55°C to 150°C junction temperature.

IRF7317TRPBF
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[IN STOCK] In Stock: 9 pcs
$1.97/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7317TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.6A, 5.3A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id700mV @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6A, 4.5V
Gate charge (Qg) (Max) @ vgs27nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds900pF @ 15V

Technical details

Complementary N/P-channel in one SOIC-8 — what it saves on the board

The IRF7317TRPBF: This complementary pair replaces two discrete SOT-23 or SOT-223 FETs, cutting placement cost and board area in half-load-switch, H-bridge leg, or synchronous-rectifier half-bridge designs where the two channels share a common drain node.

With a maximum gate threshold of 700 mV at 250 µA drain current, the IRF7317TRPBF is specified as a logic-level gate device. Total gate charge is 27 nC at 4.5 V.

Input capacitance is 900 pF at 15 V drain bias.

The Tape & Reel (TR) suffix means it ships on reels for automated pick-and-place; Cut Tape (CT) quantities are also available for prototype builds.

IRF7317TRPBF
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