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Infineon Technologies IRF7316TRPBF
Infineon Technologies

IRF7316TRPBF HEXFET Dual P-Channel MOSFET, 30V 4.9A

MPNIRF7316TRPBF
End of Life

IRF7316TRPBF, HEXFET series, dual P-Channel MOSFET, 30V drain-source, 4.9A continuous drain, 58 mOhm Rds(on) at 10V, logic-level gate, 8-SOIC package, -55°C to 150°C.

$1.14Ref. price · indicative, final on quote
IRF7316TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF7316TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET type2 P-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C4.9A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs58mOhm @ 4.9A, 10V
Gate charge (Qg) (Max) @ vgs34nC @ 10V
Input capacitance (Ciss) (Max) @ vds710pF @ 25V

Product details

Dual P-Channel 30V MOSFET for high-side switching

The IRF7316TRPBF is a dual P-Channel MOSFET from the HEXFET series, rated for 30V drain-to-source and 4.9A continuous drain current.

On-resistance is 58 mOhm maximum at 4.9A with a 10V gate drive. At the logic-level threshold of 1V, the device is fully enhanced; the 34 nC total gate charge at 10V means a 100 kHz switching frequency draws about 3.4 mA average from the gate driver, well within the output capability of a typical MCU pin or dedicated gate-driver IC.

Temperature range and package

The 8-SOIC package (0.154-inch width) is a standard surface-mount footprint.

Active production and compliance

It is ROHS3 compliant.