Infineon HEXFET IRF7314TRPBF, dual P-channel logic-level MOSFET, 20 V Vdss, 5.3 A continuous drain, 58 mOhm Rds(on) at 4.5 Vgs, SOIC-8 package, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting type | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5.3A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 700mV @ 250µA |
| Rds on (Max) @ id, vgs | 58mOhm @ 2.9A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 29nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 780pF @ 15V |
The IRF7314TRPBF: Total gate charge at 4.5 V is 29 nC max. The 780 pF input capacitance at 15 V Vds gives a rough idea of the switching loss at higher frequencies; keep the gate drive impedance low to avoid slow turn-off in a hard-switched load.
The 2 W package power limit is the real constraint, not the 5.3 A drain rating. The -55 to 150 °C operating range covers automotive under-hood and industrial environments.
The maximum on-resistance is 58 mOhm at 2.9 A drain current with a 4.5 V gate drive. At lower gate voltages the Rds(on) rises; the logic-level threshold (700 mV max at 250 µA) ensures a 3.3 V logic signal still turns the channel on hard.
This is a moderate figure for a dual P-channel in an SOIC-8 — a 100 kHz PWM gate driver needs about 2.9 mA average per channel.