The 29 mOhm max on-resistance at 5.8 A, 10 V sets the conduction loss floor for a given load — at 5 A the dissipation is about 0.73 W per channel, so the 2 W package power limit means both channels cannot run at full current simultaneously in a typical ambient; derating is required. Gate charge totals 33 nC at 10 V, and input capacitance is 650 pF at 25 V Vds. For a 100 kHz switching frequency, the gate-drive current needed is about 3.3 mA per channel — well within a standard gate driver's capability, but the SO-8 thermal path means the PCB copper area under the part is the real heatsink.
IRF7313TRPBF carries an Active product status. ROHS3 compliant.
Thermal and package — the SO-8 reality
The junction temperature range is -55°C to 150°C, covering industrial and some automotive under-hood environments. The SO-8 package (3.90 mm wide body) has no exposed pad — the die is attached to the leadframe, and heat flows primarily through the drain leads and the PCB copper. For continuous operation above 3 A per channel, a 2-oz copper pour on the board is advisable.