IRF7313TRPBF

Infineon Technologies · HEXFET® Series

IRF7313TRPBF, HEXFET series, dual N-channel MOSFET, 30V Vdss, 6.5A Id, 29mOhm Rds(on) max at 10V, 33nC Qg, 650pF Ciss, SO-8 package, -55 to 150°C TJ.

IRF7313TRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 9,553 pcs
$0.72/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7313TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.5A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds650pF @ 25V

Technical details

The 29 mOhm max on-resistance at 5.8 A, 10 V sets the conduction loss floor for a given load — at 5 A the dissipation is about 0.73 W per channel, so the 2 W package power limit means both channels cannot run at full current simultaneously in a typical ambient; derating is required.

IRF7313TRPBF carries an Active product status. ROHS3 compliant.

Thermal and package — the SO-8 reality

The SO-8 package (3.90 mm wide body) has no exposed pad — the die is attached to the leadframe, and heat flows primarily through the drain leads and the PCB copper. For continuous operation above 3 A per channel, a 2-oz copper pour on the board is advisable.

IRF7313TRPBF
[ALLOC] verified
Quote