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IRF7313TRPBF

IRF7313TRPBF HEXFET Dual N-Ch MOSFET, 30V, 6.5A, 29mOhm

MPNIRF7313TRPBF
End of Life

IRF7313TRPBF, HEXFET series, dual N-channel MOSFET, 30V Vdss, 6.5A Id, 29mOhm Rds(on) max at 10V, 33nC Qg, 650pF Ciss, SO-8 package, -55 to 150°C TJ.

$1.03Ref. price · indicative, final on quote
Infineon Technologies IRF7313TRPBF datasheet (PDF)
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF7313TRPBF specifications
ParameterValue
SeriesHEXFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.5A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds650pF @ 25V

Product details

The 29 mOhm max on-resistance at 5.8 A, 10 V sets the conduction loss floor for a given load — at 5 A the dissipation is about 0.73 W per channel, so the 2 W package power limit means both channels cannot run at full current simultaneously in a typical ambient; derating is required.

IRF7313TRPBF carries an Active product status. ROHS3 compliant.

Thermal and package — the SO-8 reality

The SO-8 package (3.90 mm wide body) has no exposed pad — the die is attached to the leadframe, and heat flows primarily through the drain leads and the PCB copper. For continuous operation above 3 A per channel, a 2-oz copper pour on the board is advisable.

Frequently asked questions

What is the Rds(on) value for IRF7313TRPBF?

Maximum on-resistance is 29 mOhm at 5.8 A drain current with 10 V gate drive. This is the conduction loss figure to use for worst-case thermal design.