IRF7309TRPBF, HEXFET® series, N and P-Channel MOSFET, 30V Vdss, 4A/3A Id, 50mOhm Rds(on) at 2.4A, 10V, 8-SOIC package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 4A, 3A |
| Power - max | 1.4W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 520pF @ 15V |
The IRF7309TRPBF is an Infineon HEXFET® MOSFET that integrates an N-channel and a P-channel device in a single 8-SOIC package, rated for 30 V drain-to-source voltage with continuous drain currents of 4 A and 3 A respectively.
With a typical gate charge of 25 nC at 4.5 V, the switching losses stay manageable for DC/DC converters in the 100–200 kHz range.
Maximum on-resistance is 50 mOhm at 2.4 A drain current with 10 V gate drive.
Yes — it is listed as ROHS3 compliant.