Total gate charge is 80 nC at 10 V, and the input capacitance measures 3220 pF at 25 V drain bias. For a 100 kHz switching converter the gate-driver must supply an average 8 mA to charge and discharge the gate — a standard 1 A gate-driver IC handles this with margin. The drive voltage range spans 4.5 V to 10 V; at 4.5 V the on-resistance rises above the 41 mOhm figure quoted at 10 V, so budget a higher Rds(on) if the gate drive rail is 5 V logic.
IRF7241TRPBF P-Channel MOSFET, 40V, 6.2A, 41mOhm
MPNIRF7241TRPBF
End of Life
Infineon HEXFET® IRF7241TRPBF, P-Channel MOSFET, 40V Vdss, 6.2A continuous drain, 41mOhm Rds(on) at 10V, 80nC gate charge, -55 to 150°C, 8-SOIC surface mount.
$1.06Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.2A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 41mOhm @ 6.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3220 pF @ 25 V |
Product details
Frequently asked questions
What is the maximum drain current of IRF7241TRPBF?
The continuous drain current is 6.2 A at 25 °C, rated on the 8-SOIC package with the junction temperature held within the -55 to 150 °C range.
Is IRF7241TRPBF lead-free?
Yes, the IRF7241TRPBF is ROHS3 compliant, which includes lead-free construction.