The IRF7240TRPBF: ROHS3 compliant. For a production BOM that needs a P-channel 40 V MOSFET in a standard 8-SOIC footprint, this part is a straight line-item fill, not a scavenger hunt.
15 mOhm Rds(on) — what it costs the thermal budget
The 15 mOhm maximum on-resistance at Vgs=10 V and Id=10.5 A sets the conduction loss floor. At 10 A the I²R loss is 1.5 W — within the 2.5 W package dissipation at 25 °C ambient, but with only 1 W of headroom. That narrows fast if the ambient climbs above 70 °C or if the board copper doesn't pull heat from the SOIC-8 leads.
110 nC gate charge — don't undersize the driver
Total gate charge is 110 nC at Vgs=10 V. At 100 kHz switching frequency the average gate drive current needed is 11 mA; a standard logic-level gate driver with 1 A peak output handles this easily. But a microcontroller GPIO sourcing 10–20 mA will struggle to charge that gate capacitance within the dead-time window — expect slow turn-on edges and elevated switching loss. The 9250 pF input capacitance at Vds=25 V reinforces the same point: this is a large-die P-channel that demands a real driver, not a port pin.
The 40 V drain-source rating gives margin on 24 V and 28 V nominal rails but is tight for 48 V systems — a 60 V part would be the safer call there.
8-SOIC — footprint and thermal reality
All heat escapes through the leads and the board copper. For a 2.5 W dissipation limit at 25 °C ambient, a two-layer board with minimal copper pour under the part will hit the thermal ceiling below 1 A continuous. A 4-layer board with thermal vias under the drain pins can push the practical current closer to the 10.5 A rating — but only if the ambient stays near 25 °C.