Infineon HEXFET IRF7205TRPBF, P-Channel MOSFET, 30 V Vdss, 4.6 A Id, 70 mOhm Rds(on) at 10 V, 40 nC Qg, 8-SOIC package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.6A (Ta) |
| Power dissipation | 2.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 70mOhm @ 4.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 870 pF @ 10 V |
The 40 nC total gate charge at 10 V means a moderate gate-driver current; a 100 kHz switching frequency draws about 4 mA from the driver, well within a standard gate-driver IC's capability.
The 870 pF input capacitance at 10 V drain-source is low enough that a 10-ohm gate resistor keeps ringing under control in a 12 V or 24 V bus.
The maximum on-resistance is 70 mOhm at 4.6 A drain current with 10 V gate drive.