Complementary N/P-channel pair in a single SO-8
The IRF7105TRPBF from Infineon's HEXFET® series integrates an N-channel and a P-channel MOSFET in one 8-SOIC package, rated for 25 V drain-to-source voltage with continuous drain currents of 3.5 A (N-channel) and 2.3 A (P-channel) at 25 °C.
Conduction and switching parametrics for the half-bridge
Total gate charge is 27 nC at 10 V, which means a 1 A gate driver can switch this pair at roughly 37 MHz before the drive current becomes the limiting factor — for practical 100–500 kHz power stages the gate-drive loss is negligible. Input capacitance is 330 pF at 15 V Vds, a moderate figure that keeps the switching node ringing manageable without excessive snubbing on a well-laid-out 4-layer board.
Package and temperature grade for the environment
The 8-SOIC (0.154-inch width) package is a surface-mount footprint with a 2 W maximum power dissipation — the copper pad area under the die sets the thermal resistance, so a solid ground plane pour is expected for continuous operation above 1 A.