IRF7103TRPBF

Infineon Technologies · HEXFET® Series

MOSFET 2N-CH 50V 3A 8-SOIC

IRF7103TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF7103TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage50V
Current - continuous drain (Id) @ 25°C3A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs30nC @ 10V
Input capacitance (Ciss) (Max) @ vds290pF @ 25V
IRF7103TRPBF
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